DocumentCode :
2561417
Title :
A 40 Gb/s Optical Receiver in 80-nm CMOS for Short-Distance High-Density Interconnects
Author :
Kromer, C. ; Sialm, G. ; Erni, D. ; Jäckel, H. ; Morf, T. ; Kossel, M.
Author_Institution :
Swiss Federal Inst. of Technol. (ETH) Zurich, Zurich
fYear :
2006
fDate :
13-15 Nov. 2006
Firstpage :
395
Lastpage :
398
Abstract :
An optical receiver for short-range optical data communication up to 40 Gb/s is presented. The optimum number of limiting amplifier (LA) stages is calculated to achieve a large gain-bandwidth product. The receiver features an electrical transimpedance gain of 91.4 dBOmega and a bandwidth of 19.2 GHz. For the free-space optical measurements (lambda=1550nm) an InGaAs/lnP photo diode (PD) and the CMOS receiver chip were placed and bonded on a test substrate. At 40 Gb/s an open eye at the output of the receiver is shown at an optical input power of -4.6 dBni. Including the transmitter non-idealities, sensitivities at 20 Gb/s and 30 Gb/s of-8.2 dBni and -7.5 dBm, respectively, at a BER = 10-12 were measured. The complete receiver consumes 56 mW from a 1.1-V supply and occupies a chip area of 230 mum x 220 mum only.
Keywords :
CMOS integrated circuits; III-V semiconductors; amplifiers; gallium arsenide; indium compounds; optical interconnections; optical receivers; photodiodes; CMOS receiver chip; InGaAs-InP; bandwidth 19.2 GHz; bit rate 40 Gbit/s; electrical transimpedance gain; free-space optical measurements; gain-bandwidth product; limiting amplifier; optical receiver; photodiode; power 56 mW; short-distance high-density interconnects; short-range optical data communication; size 220 mum; size 230 mum; size 80 nm; voltage 1.1 V; wavelength 1550 nm; Bandwidth; Data communication; Indium gallium arsenide; Optical amplifiers; Optical interconnections; Optical receivers; Optical sensors; Optical transmitters; Semiconductor device measurement; Stimulated emission; Optical receiver; current mode logic (CML); photo receiver; transimpedance amplifier (TIA);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
Conference_Location :
Hangzhou
Print_ISBN :
0-7803-9734-7
Electronic_ISBN :
0-7803-97375-5
Type :
conf
DOI :
10.1109/ASSCC.2006.357934
Filename :
4197673
Link To Document :
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