Title :
Scalability of Carbon Nanotube FET-based Circuits
Author :
Keshavarzi, Ali ; Raychowdhury, Arijit ; Kurtin, Juanita ; Roy, Kaushik ; De, Vivek
Abstract :
In this paper, we studied the scalability of CNT-based devices and circuits. We focused mainly on SB CNFETs and determined 1-1,5 nm to be an optimum tube diameter to achieve the best performance-power trade-off We established that CNTs have a potential in logic applications. We introduced FOA metric and showed improvement over Si-based MOSFETs and we extended our discussion toward scalability of CNFETs. CNTs are potentially a promising novel material to be integrated into future technology generations if research communities can collectively address some of the barriers and fabrication challenges this material system is facing.
Keywords :
carbon nanotubes; field effect transistor circuits; FOA metric; carbon nanotube FET-based circuit; frequency-over-area metric; Carbon nanotubes; Circuit simulation; Doping; Electrostatics; Logic devices; MOSFETs; Scalability; Schottky barriers; Transconductance; Tunneling;
Conference_Titel :
Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
Conference_Location :
Hangzhou
Print_ISBN :
0-7803-9734-7
Electronic_ISBN :
0-7803-97375-5
DOI :
10.1109/ASSCC.2006.357939