DocumentCode
2561510
Title
Scalability of Carbon Nanotube FET-based Circuits
Author
Keshavarzi, Ali ; Raychowdhury, Arijit ; Kurtin, Juanita ; Roy, Kaushik ; De, Vivek
fYear
2006
fDate
13-15 Nov. 2006
Firstpage
415
Lastpage
418
Abstract
In this paper, we studied the scalability of CNT-based devices and circuits. We focused mainly on SB CNFETs and determined 1-1,5 nm to be an optimum tube diameter to achieve the best performance-power trade-off We established that CNTs have a potential in logic applications. We introduced FOA metric and showed improvement over Si-based MOSFETs and we extended our discussion toward scalability of CNFETs. CNTs are potentially a promising novel material to be integrated into future technology generations if research communities can collectively address some of the barriers and fabrication challenges this material system is facing.
Keywords
carbon nanotubes; field effect transistor circuits; FOA metric; carbon nanotube FET-based circuit; frequency-over-area metric; Carbon nanotubes; Circuit simulation; Doping; Electrostatics; Logic devices; MOSFETs; Scalability; Schottky barriers; Transconductance; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
Conference_Location
Hangzhou
Print_ISBN
0-7803-9734-7
Electronic_ISBN
0-7803-97375-5
Type
conf
DOI
10.1109/ASSCC.2006.357939
Filename
4197678
Link To Document