• DocumentCode
    2561510
  • Title

    Scalability of Carbon Nanotube FET-based Circuits

  • Author

    Keshavarzi, Ali ; Raychowdhury, Arijit ; Kurtin, Juanita ; Roy, Kaushik ; De, Vivek

  • fYear
    2006
  • fDate
    13-15 Nov. 2006
  • Firstpage
    415
  • Lastpage
    418
  • Abstract
    In this paper, we studied the scalability of CNT-based devices and circuits. We focused mainly on SB CNFETs and determined 1-1,5 nm to be an optimum tube diameter to achieve the best performance-power trade-off We established that CNTs have a potential in logic applications. We introduced FOA metric and showed improvement over Si-based MOSFETs and we extended our discussion toward scalability of CNFETs. CNTs are potentially a promising novel material to be integrated into future technology generations if research communities can collectively address some of the barriers and fabrication challenges this material system is facing.
  • Keywords
    carbon nanotubes; field effect transistor circuits; FOA metric; carbon nanotube FET-based circuit; frequency-over-area metric; Carbon nanotubes; Circuit simulation; Doping; Electrostatics; Logic devices; MOSFETs; Scalability; Schottky barriers; Transconductance; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
  • Conference_Location
    Hangzhou
  • Print_ISBN
    0-7803-9734-7
  • Electronic_ISBN
    0-7803-97375-5
  • Type

    conf

  • DOI
    10.1109/ASSCC.2006.357939
  • Filename
    4197678