• DocumentCode
    2561686
  • Title

    Analyses of Random Threshold Voltage Fluctuations in MOS Devices

  • Author

    Takeuchi, K. ; Tsunomura, T. ; Putra, A.T. ; Fukai, T. ; Nishida, A. ; Kamohara, S. ; Hiramoto, T.

  • Author_Institution
    LSI Fundamental Res. Lab., NEC Electron. Corp., Sagamihara, Japan
  • fYear
    2009
  • fDate
    11-12 June 2009
  • Firstpage
    7
  • Lastpage
    10
  • Abstract
    By comparing electrical data of a wide variety of MOSFETs using a special normalization method, it was revealed that pFET random fluctuations can be mostly explained by RDF, while some additional fluctuation mechanism contributes to nFETs. It is suspected that this difference is caused by the different behavior of the channel impurity species.
  • Keywords
    MIS devices; MOSFET; field effect transistors; fluctuations; MOS devices; MOSFET; channel impurity; nFET; normalization method; pFET; random fluctuations; threshold voltage fluctuations; Fluctuations; Impurities; MOS devices; MOSFETs; Microscopy; National electric code; Permittivity measurement; Resource description framework; Threshold voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2009. IWJT 2009. International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4244-3319-3
  • Electronic_ISBN
    978-1-4244-3320-9
  • Type

    conf

  • DOI
    10.1109/IWJT.2009.5166206
  • Filename
    5166206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2561686