Title :
Analyses of Random Threshold Voltage Fluctuations in MOS Devices
Author :
Takeuchi, K. ; Tsunomura, T. ; Putra, A.T. ; Fukai, T. ; Nishida, A. ; Kamohara, S. ; Hiramoto, T.
Author_Institution :
LSI Fundamental Res. Lab., NEC Electron. Corp., Sagamihara, Japan
Abstract :
By comparing electrical data of a wide variety of MOSFETs using a special normalization method, it was revealed that pFET random fluctuations can be mostly explained by RDF, while some additional fluctuation mechanism contributes to nFETs. It is suspected that this difference is caused by the different behavior of the channel impurity species.
Keywords :
MIS devices; MOSFET; field effect transistors; fluctuations; MOS devices; MOSFET; channel impurity; nFET; normalization method; pFET; random fluctuations; threshold voltage fluctuations; Fluctuations; Impurities; MOS devices; MOSFETs; Microscopy; National electric code; Permittivity measurement; Resource description framework; Threshold voltage; Transistors;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166206
