Junction technologies for devices with steep subthreshold swing

Author

Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore

fYear

2009

fDate

11-12 June 2009

Firstpage

11

Lastpage

14

Abstract

In this paper, we examine the Impact Ionization Field-Effect Transistor (I-FET or I-MOS) as well as the Tunnel Field-Effect Transistor (T-FET), paying attention to junction and material design requirements based on device physics considerations. Device performance parameters and electrical characteristics of I-MOS and T-FET devices are dependent on device structure, doping level, doping gradient, and/or material properties. Device design exploiting semiconductor heterojunctions and lattice mismatched materials for strain engineering are also discussed.

Keywords

field effect transistors; semiconductor heterojunctions; doping level; impact ionization field-effect transistor; material design; semiconductor heterojunctions; strain engineering; tunnel field-effect transistor; Capacitive sensors; Electric variables; FETs; Heterojunctions; Impact ionization; Lattices; Material properties; Physics; Semiconductor device doping; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2009. IWJT 2009. International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-3319-3

Electronic_ISBN

978-1-4244-3320-9

Type

conf

DOI

10.1109/IWJT.2009.5166207

Filename

5166207