DocumentCode
2561718
Title
High performance AlGaInAs/InP strained MQW lasers for optical communication
Author
Lu, Hunh ; Sahara, Richard ; Baliga, Awind ; Ranganathan, Rughu ; Burroughs, Scott
Author_Institution
Lasertron, Bedford, MA, USA
Volume
2
fYear
1996
fDate
18-21 Nov. 1996
Abstract
The performance of 1300 nm uncooled FP devices based on compressive and tensile strained MQWs developed at Lasertron is reviewed. Results for 1550 nm FP lasers with compressively strained MQWs are also discussed. The possibility of designing this material system to fabricate DFB lasers with narrow spectral linewidth for long haul, high capacity and wide temperature range optical fiber communications is introduced. Up to date, conventional index and gain-coupled DFB laser structures are reviewed theoretically and experimentally in term of single mode yield and performances. Finally, we summarize the latest results of device characteristics and system performances based on Lasertron´s AlGaInAs/InP strained MQW DFB lasers.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; optical transmitters; quantum well lasers; 1300 nm; 1550 nm; AlGaInAs-InP; AlGaInAs/InP strained MQW lasers; DFB lasers; Lasertron; compressively strained MQWs; device characteristics; gain-coupled DFB laser structures; narrow spectral linewidth; optical fiber communications; single mode yield; system performance; tensile strained MQWs; uncooled FP devices; Conducting materials; Fiber lasers; Indium phosphide; Laser modes; Laser theory; Optical fiber communication; Optical materials; Power lasers; Quantum well devices; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.571675
Filename
571675
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