Title :
Determination of the electric field profile in amorphous Si diodes
Author :
Dietrich, K. ; Krühler, W. ; Karg, F.H.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
An evaluation method is presented which is applied to the delayed-field time-of-flight (DF TOF) experiment, which allows the determination of the electric field profiles in amorphous-silicon-based devices. It is called differential delayed field (DDF) method. The field profiles at the p/i junction of differently prepared pin-structures were determined. A linearly decreasing phosphorus (P) doping layer was incorporated into the i-layer starting at the p/i junction. The data show that an increased width of a P-profile reduces the carrier injection and hence the electric field strength. The space charge field of a Schottky/a-Si:H contact is studied in dependence of the applied DC bias voltage
Keywords :
amorphous semiconductors; electric fields; elemental semiconductors; silicon; solar cells; amorphous Si solar cells; applied DC bias voltage; carrier injection; delayed-field time-of-flight; differential delayed field method; electric field profile; electric field strength; p/i junction; pin-structures; semiconductor; space charge field; Amorphous materials; Amorphous silicon; Current measurement; Delay effects; Electrons; Performance evaluation; Photoconductivity; Photovoltaic cells; Schottky diodes; Space charge;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169412
