Non-equilibrium Charge Carriers Life Times in Semi-Insulating GaAs Compensated with Chromium

Author

Zarubin, Andrey N. ; Mokeev, Dmitry Y. ; Okaevich, Lyudmila S. ; Tyazhev, Anton V. ; Bimatov, Mikhail V. ; Lelekov, Mikhail A. ; Ponomarev, Ivan V.

Author_Institution

Siberian Physics-Technical Institute, Tomsk, Russia

fYear

2006

fDate

38899

Firstpage

345

Lastpage

348

Abstract

In activity the observed data of a life time of non-equilibrium charge carriers in detectors based on GaAs, compensated with Cr are shown On the basis of the analysis of experimental data is established, that in electrical fields with strength in range from 1 to 10 kV/s the values of non-equilibrium electrons and holes life times do not depend on electric field strength It is shown, that using of two miscellaneous techniques results in considerable difference in values of a nonequilibrium holes life time, while the life times of electrons have comparable values.

Keywords

III-V semiconductors; X-ray detection; X-ray imaging; chromium; gallium arsenide; image sensors; semiconductor devices; Cr; GaAs; X-ray detection; chromium; nonequilibrium charge carrier; nonequilibrium electrons; radiation imaging detector; semi-insulating gallium arsenide; semiconductor detectors; Charge carrier processes; Charge carriers; Chromium; Gallium arsenide; Ionizing radiation; Radiation detectors; Radiography; Semiconductor radiation detectors; X-ray detection; X-ray detectors; GaAs; X-ray; radiation imaging detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on

Conference_Location

Novosibirsk, Russia

ISSN

1815-3712

Print_ISBN

5-7782-0646-1

Type

conf

DOI

10.1109/SIBEDM.2006.231988

Filename

1694122