Title :
Trends in Development of Modern Silicon Nanoelectronics
Author :
Neizvestny, Igor G.
Author_Institution :
Inst. of Semicond. Phys., Russian Acad. of Sci.
Abstract :
In this tutorial the main trends in development of silicon nanoelectronics are presented and analyzed. All presented technologies are illustrated
Keywords :
integrated circuit technology; monolithic integrated circuits; nanoelectronics; semiconductor technology; silicon; Si; germanium technology; silicon nanoelectronics; silicon technology; CMOS technology; Compressive stress; Doping; Germanium silicon alloys; MOSFET circuits; Microelectronics; Nanoelectronics; Silicon germanium; Tensile stress; Transistors; germanium; nanoelectronics; silicon; technology;
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0646-1
DOI :
10.1109/SIBEDM.2006.231989
