DocumentCode :
2561829
Title :
Integrated Porous Silicon Nano-Explosive Devices
Author :
Du Plessis, Monuko
Author_Institution :
Dept. of Electr., Electron. & Comput. Eng., Pretoria Univ.
fYear :
2006
fDate :
1-5 July 2006
Firstpage :
6
Lastpage :
13
Abstract :
The explosive properties of porous-silicon, impregnated with an oxidant, were researched. A porous layer structural model is proposed to model the pore and crystallite dimensions as a result of the electrochemical etching of porous silicon layers. A gravimetric experimental technique is described whereby the pore dimensions and specific surface area of porous regions can be determined, resulting in a new relationship between pore size and specific surface area. The properties of different oxidants, were investigated. The filling of the pores by the oxidant is a strong function of pore size and the type of oxidant used. The experimentally observed nano-explosive figure of merit (FOM) is a function of the effective surface area in the porous region covered by the oxidant. It was found that there is an optimum pore size for the most energetic explosion. Future applications for this new technology are proposed
Keywords :
etching; explosions; nanocomposites; nanoelectronics; nanoporous materials; porous semiconductors; silicon; Si; crystallite dimension; electrochemical etching; gravimetric experimental technique; nano-explosive device; oxidant; pore dimension; porous silicon; specific surface area; Atomic layer deposition; Etching; Ethanol; Explosives; Hafnium; Hydrogen; Nanoscale devices; Silicon; Temperature; Vacuum systems; Nano-explosion; porous silicon; silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Erlagol, Altai
ISSN :
1815-3712
Print_ISBN :
5-7782-0646-1
Type :
conf
DOI :
10.1109/SIBEDM.2006.231990
Filename :
1694124
Link To Document :
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