DocumentCode :
2561854
Title :
Developments of Non-Volatile Memory
Author :
Panov, Ivan V. ; Kalinin, Sergey V.
Author_Institution :
Siberian State Univ. of Telecommun. & Informatics, Novosibirsk
fYear :
2006
fDate :
1-5 July 2006
Firstpage :
15
Lastpage :
17
Abstract :
The article contains the information about the most perspective technologies in area of non-volatile memory: flash memory, SONOS structures, high K structures, FRAM, MRAM, NRAM, OUM
Keywords :
ferroelectric storage; flash memories; magnetoresistive devices; nanotube devices; random-access storage; FRAM; MRAM; NRAM; OUM; SONOS structures; Si-SiO2-Si3N4-SiO2-Si; ferroelectric memory; flash memory; high K structures; magneto-resistive random access memory; nanotube random access memory; nonvolatile memory; ovonic unified memory; Amorphous materials; Ferroelectric films; High K dielectric materials; High-K gate dielectrics; Magnetic field measurement; Nanotubes; Nonvolatile memory; Random access memory; SONOS devices; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Erlagol, Altai
ISSN :
1815-3712
Print_ISBN :
5-7782-0646-1
Type :
conf
DOI :
10.1109/SIBEDM.2006.231992
Filename :
1694126
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2561854
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