Influence of amorphization depth on sheet resistance in shallow junction formation with B cluster implantation

Author

Kawasaki, Yoji ; Maruyama, Yoshiki ; Yoshimura, Hidefumi ; Miyatake, Hiroshi ; Shibahara, Kentaro

Author_Institution

Renesas Technol. Corp., Itami, Japan

fYear

2009

fDate

11-12 June 2009

Firstpage

31

Lastpage

33

Abstract

The authors have examined the influence of the amorphous layer on sheet resistance (R_s) utilizing B₁₈H_X ⁺ and its dimer implantation. Because of partial decomposition of B₁₈H₂₂ in an ion source chamber, the extracted ion beam consists of a lot of kinds of B₁₈H_X ⁺ ions. In addition, as a result of polymerization, the dimer of B₁₈H_X ⁺ ions are also included. Deeper amorphization is expected for the dimer implantation, because it is reported that the dimer ion of As formed the thicker amorphized layer than that of monomer.

Keywords

amorphisation; amorphous semiconductors; boron; electrical resistivity; elemental semiconductors; ion implantation; semiconductor junctions; silicon; B cluster implantation; B₁₈H_X ⁺; Si:B; amorphization depth; shallow junction formation; sheet resistance; Amorphous materials; Annealing; Atomic measurements; Boron; Ellipsometry; Ion beams; Ion sources; Particle beam optics; Spectroscopy; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2009. IWJT 2009. International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-3319-3

Electronic_ISBN

978-1-4244-3320-9

Type

conf

DOI

10.1109/IWJT.2009.5166212

Filename

5166212