Strained-Silicon as New High-Speed Technology

Author

Shapin, Alexey G. ; Kalinin, Sergey V.

Author_Institution

Siberian State Univ. of Telecommun. & Informatics, Novosibirsk

fYear

2006

fDate

1-5 July 2006

Firstpage

21

Lastpage

23

Abstract

In the report we consider the basic prospects of development of strained-silicon technology in a communication facility, designs and principle of action MOSFET and the better hetero bipolar transistor (HBT) for wireless integrated circuit (IC), which working on frequencies of exceeding 350 GHz, analyze and compare performance data of HBT with GaAs and SiGe

Keywords

Ge-Si alloys; III-V semiconductors; MOSFET; elemental semiconductors; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; integrated circuit design; silicon; 350 GHz; GaAs; HBT; MOSFET; SiGe; communication facility; hetero bipolar transistor; high-speed technology; strained-silicon; wireless integrated circuit; Bipolar integrated circuits; Bipolar transistors; Communications technology; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; MOSFET circuits; Performance analysis; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

5-7782-0646-1

Type

conf

DOI

10.1109/SIBEDM.2006.231994

Filename

1694128