Title :
The Perspective Structures for Microwave Heterotransistors for Communication Techniques
Author :
Mashkantsev, Vitaliy G. ; Kalinin, Sergey V.
Author_Institution :
Siberian State Univ. of Telecommun. & Informatics, Novosibirsk
Abstract :
This information contains the main elementary base of nanoheterostructural electronics, which combines high electron mobility transistors (HEMT), heterojunction bipolar transistors (HBT) and GaN transistors
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; microcomputers; microprocessor chips; microwave transistors; mobile radio; wide band gap semiconductors; GaN; HBT; HEMT; communication techniques; heterojunction bipolar transistors; high electron mobility transistors; microwave heterotransistors; nanoheterostructural electronics; Consumer electronics; Gallium arsenide; Gallium nitride; HEMTs; Heterojunction bipolar transistors; MODFETs; Microwave communication; Microwave devices; Microwave theory and techniques; Microwave transistors;
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0646-1
DOI :
10.1109/SIBEDM.2006.231995
