Title :
The Modern Technology for Silicon NanoFET
Author :
Lobanova, Tatiana V. ; Vorontsov, Yaroslav ; Kalinin, Serguei V.
Author_Institution :
Siberian State Univ. of Telecommun. & Informatics, Novosibirsk
Abstract :
Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed
Keywords :
MOSFET; elemental semiconductors; field effect transistors; silicon; silicon-on-insulator; Si; field silicon nanotransistors; silicon nanoFET; teracycle transistors; Dielectric materials; High K dielectric materials; High-K gate dielectrics; Lattices; MOSFETs; Mass production; Permittivity; Silicon compounds; Silicon on insulator technology; Space technology;
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0646-1
DOI :
10.1109/SIBEDM.2006.231996
