• DocumentCode
    2561925
  • Title

    The Modern Technology for Silicon NanoFET

  • Author

    Lobanova, Tatiana V. ; Vorontsov, Yaroslav ; Kalinin, Serguei V.

  • Author_Institution
    Siberian State Univ. of Telecommun. & Informatics, Novosibirsk
  • fYear
    2006
  • fDate
    1-5 July 2006
  • Firstpage
    27
  • Lastpage
    29
  • Abstract
    Under consideration are the technological peculiarities of the production and construction of modern field silicon nanotransistors (FSNT), including teracycle transistors (TCT), their performance capabilities and limit properties are analyzed
  • Keywords
    MOSFET; elemental semiconductors; field effect transistors; silicon; silicon-on-insulator; Si; field silicon nanotransistors; silicon nanoFET; teracycle transistors; Dielectric materials; High K dielectric materials; High-K gate dielectrics; Lattices; MOSFETs; Mass production; Permittivity; Silicon compounds; Silicon on insulator technology; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
  • Conference_Location
    Erlagol, Altai
  • ISSN
    1815-3712
  • Print_ISBN
    5-7782-0646-1
  • Type

    conf

  • DOI
    10.1109/SIBEDM.2006.231996
  • Filename
    1694130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2561925