Title :
Multivariate Modeling of Heterogeneous Geometrical Surfaces in the Technological Cycle of Manufacturing Silicon Matrixes
Author :
Perov, Gennadiy V. ; Shauerman, Aleksey A.
Author_Institution :
Siberian State Univ. of Telecommun. & Comput. Sci., Novosibirsk
Abstract :
A one-dimensional development model of a non-uniform semiconductor surface with adjusted horizontal type of doping is elaborated during thermal oxidation. The model is adapted to structures - polycrystalline silicon (PC) - oxide. Frameworks of the subsequent model expansion in 3D format for the analysis of electric and charging characteristics in heterogeneous structures are proved
Keywords :
elemental semiconductors; oxidation; semiconductor doping; silicon; 1D development model; Si; charging characteristics; doping; electric characteristics; heterogeneous geometrical surfaces; multivariate modeling; nonuniform semiconductor surface; polycrystalline silicon; silicon matrixes; thermal oxidation; Doping; Impurities; Microcomputers; Oxidation; Rough surfaces; Semiconductor process modeling; Silicon; Solid modeling; Surface roughness; Virtual manufacturing;
Conference_Titel :
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0646-1
DOI :
10.1109/SIBEDM.2006.231997
