DocumentCode
2561930
Title
A comparative study of double gate MOSFET with asymmetric barrier heights at source/drain and the symmetric DG-SBFET
Author
Xiong-Xiong, Du ; Sun Lei ; Xiao-yan, Liu ; Han Ru-Qi
Author_Institution
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear
2009
fDate
11-12 June 2009
Firstpage
47
Lastpage
50
Abstract
Double gate SBFET with asymmetric barrier heights at source/drain and the symmetric DG-SBFET are simulated. A comparative study between them is made. We have found that the DG-ASBFET is more appropriate for LOP and LSPT applications. Furthermore, the DG-ASBFET shows a better scale ability and better immunity to the short channel effects.
Keywords
MOSFET; Schottky barriers; Schottky barrier source/drain MOSFET; asymmetric barrier heights; double gate MOSFET; low operating power; low standby power technology; metal oxide semiconductor field effect transistor; short channel effects; symmetric DG-SBFET; CMOS technology; Electrodes; Electrons; Fabrication; MOSFET circuits; Microelectronics; Schottky barriers; Semiconductor device doping; Silicides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location
Kyoto
Print_ISBN
978-1-4244-3319-3
Electronic_ISBN
978-1-4244-3320-9
Type
conf
DOI
10.1109/IWJT.2009.5166217
Filename
5166217
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