Title :
Electrical transport characterization of nano CMOS devices with ultra-thin silicon film
Author :
Ghibaudo, G. ; Mouis, M. ; Pham-Nguyen, L. ; Bennamane, K. ; Pappas, I. ; Cros, A. ; Bidal, G. ; Fleury, D. ; Claverie, A. ; Benassayag, G. ; Fazzini, P.-F. ; Fenouillet-Beranger, C. ; Monfray, S. ; Boeuf, F. ; Cristoloveanu, S. ; Skotnicki, T. ; Collaert
Author_Institution :
IMEP-LAHC, MINATEC/INPG, Grenoble, France
Abstract :
The mobility and, more generally, the transport parameters of MOS devices are key quantities for the performance evaluation in advanced CMOS technologies. In this work, a review of the main mobility results obtained in short channel devices (here GAA/DG, FD-SOI MOSFETs and FinFETs) are presented and discussed for better understanding their transport limitations and, in turn, their performances.
Keywords :
CMOS integrated circuits; MOSFET; Monte Carlo methods; carrier mobility; elemental semiconductors; nanoelectronics; silicon; silicon-on-insulator; 2D Monte Carlo collision simulation; FD-SOI; FinFET; MOS devices; MOSFET; S-D implantation process; Si; channel diffusion scattering centres; double gate transistors; drain junction; electrical transport characterization; gate length dependence; low temperature measurement; mobility; nano CMOS devices; neutral point defect; short channel devices; silicon-on-insulator; source junction; ultrathin silicon film; CMOS technology; Capacitance measurement; Doping; MOS devices; MOSFETs; Performance evaluation; Semiconductor films; Silicon; Tensile stress; Thin film transistors;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166220
