Title :
Impact of defects on the performance of high efficiency 12"×13" a-Si based triple junction modules
Author :
Bennett, M. ; Newton, J. ; Poplawski, C. ; Rajan, K.
Author_Institution :
Solarex Corp., Newtown, PA, USA
Abstract :
Triple-junction a-Si-based photovoltaic modules (900 cm2) with initial conversion efficiencies between 9% and 10% have been made. Often, however, the efficiency of these modules is lowered by the effects of shunts. More surprisingly, the shunts can cause an increase in the rate of degradation due to light exposure. The shunts seem to be related to debris which is formed during the deposition of the conducting oxide on the glass substrate. Techniques by which these effects can be minimized are presented
Keywords :
amorphous semiconductors; crystal defects; elemental semiconductors; silicon; solar cells; 9 to 10 percent; amorphous Si solar cells; conducting oxide; defects; degradation; glass substrate; light exposure; semiconductor; shunts; triple junction modules; Glass; Photovoltaic systems; Semiconductor thin films; Solar power generation; Stability; Substrates; Sun; Testing; Thermal degradation; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169414
