Two-dimensional carrier profiling with sub-nm resolution using SSRM: From basic concept to TCAD calibration and device tuning

We present some recent studies demonstrating that the scanning spreading resistance microscopy (SSRM) technique is a good candidate for the 2D calibration of process/device simulators as it offers a unique combination of spatial resolution and of sensitivity. HV-SSRM (high vacuum SSRM) is a new and promising improvement of the classical SSRM technique presenting an enhanced resolution and a better signal to noise ratio. Within this study, we have shown that HV-SSRM could be successfully used to calibrate classical process simulations for 65 nm technology node devices. It can of course also be used for the most recent technology nodes as shown also in this paper. Its correlation with KMC leads to useful information with regard of process developments, (i.e. the underdiffusion and the activation level of the extension implants, the position and the shape of the pocket implants,...) In the coming years, as processes and process models are becoming increasingly complex, 2D calibration will be growingly required for their calibration. HV-SSRM appears as a perfect candidate to fulfill this challenge.