Title :
12% two-stacked a-Si:H tandem cells with a new p-layer structure
Author :
Ichikawa, Y. ; Fujikake, S. ; Ohta, H. ; Sasaki, T. ; Sakai, H.
Author_Institution :
Fuji Electric Corp. Res. & Dev., Ltd., Kanagawa, Japan
Abstract :
Hydrogenated amorphous silicon oxide (a-SiO:H) was applied to the p-layer of a p-i-n single-junction a-Si solar cell. The boron-doped a-SiO:H film deposited by conventional glow discharge decomposition has excellent properties as compared with a-SiC:H. Applying this film to the p-layer, a conversion efficiency of 12.5% in a 1 cm2 cell was attained
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; silicon; solar cells; 12.5 percent; 2-stacked solar cells; amorphous Si:H tandem solar cell; glow discharge decomposition; p-layer structure; semiconductor; Absorption; Amorphous silicon; Conducting materials; Conductivity; Heterojunctions; Optical films; Optical materials; PIN photodiodes; Photovoltaic cells; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169417
