Vth control by halo implantation using the SEN´s MIND system

Author

Ninomiya, S. ; Kimura, Y. ; Kudo, T. ; Ochi, A. ; Sato, F. ; Tsukihara, M. ; Fuse, G. ; Sugitani, M. ; Tada, K. ; Kamiyanagi, H. ; Shibata, S.

Author_Institution

SEN Corp., Saijo, Japan

fYear

2009

fDate

11-12 June 2009

Firstpage

100

Lastpage

103

Abstract

For improvement of device yield within a wafer, SEN\´s MIND system is powerful tool. It is found that one can compensate variations from other manufacturing processes of semiconductor devices and can fabricate the "same" semiconductor devices using the MIND system. "Different dose" ion implantation processes are intentionally given on one wafer by using SEN\´s MIND system. In this paper, it is reported that the threshold voltage is controlled by large-tilted halo implantation and large-tilted lightly doped drain (LDD) implantation using the SEN\´s MIND system. It is shown that the MIND system makes yields of semiconductor devices much better.

Keywords

integrated circuit yield; ion implantation; semiconductor device manufacture; SEN MIND system; device yield improvement; halo implantation; ion implantation; manufacturing process; mapping of intentional nonuniform dosage system; semiconductor device; threshold voltage control; Control systems; Electric variables; Fuses; Ion implantation; Plasma devices; Plasma immersion ion implantation; Production; Productivity; Semiconductor devices; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2009. IWJT 2009. International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-3319-3

Electronic_ISBN

978-1-4244-3320-9

Type

conf

DOI

10.1109/IWJT.2009.5166229

Filename

5166229