Title :
The bias dependent spectral response of a-Si:H solar cells
Author :
Bruns, J. ; Gall, S. ; Wagemann, H.G.
Author_Institution :
Inst. fur Werkstoffe der Elektrotech., Tech. Univ. Berlin, Germany
Abstract :
Two different types of solar cells with a pin and a nip structure have been investigated experimentally in the annealed state and in the degraded state. A numerical model is used to simulate the different spectral behavior of both types of solar cells with a single set of parameters. A comparison between experimentally obtained and simulated spectral characteristics provides information about the current components and the spatial distribution of localized states within the device. Light degradation affects both the volume and the pi-interface region
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; silicon; solar cells; amorphous Si:H solar cells; annealed state; bias dependent spectral response; current components; degraded state; light degradation; nip structure; pin structure; semiconductor; Bonding; Charge carrier processes; Degradation; Electron mobility; Electron traps; Lighting; Numerical simulation; Optical filters; Photovoltaic cells; Wavelength measurement;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169422
