• DocumentCode
    2562246
  • Title

    Anomalous amorphization resistance of Ge against 11B+ implantation

  • Author

    Shibahara, Kentaro ; Osada, Kosei

  • Author_Institution
    Res. Inst. for Nanodevices & Bio Syst., Hiroshima Univ., Higashi-Hiroshima, Japan
  • fYear
    2009
  • fDate
    11-12 June 2009
  • Firstpage
    104
  • Lastpage
    105
  • Abstract
    Summary form only given. High dose, up to 3x10 cm16 , B+ implantation into Ge was carried out to find the critical amorphization dose. Although a highly disordered layer was observed in specimens, amorphization did not occur. The multiple vacancy complex is a possible candidate to explain such hardness against amorphization.
  • Keywords
    amorphisation; boron; elemental semiconductors; germanium; ion beam effects; ion implantation; radiation hardening (electronics); vacancies (crystal); Ge:B; anomalous amorphization resistance; boron ion implantation; critical amorphization dose; multiple vacancy complex; radiation hardness; Absorption; Amorphous materials; Crystallization; Educational technology; Ellipsometry; Heating; Immune system; Refractive index; Spectroscopy; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2009. IWJT 2009. International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4244-3319-3
  • Electronic_ISBN
    978-1-4244-3320-9
  • Type

    conf

  • DOI
    10.1109/IWJT.2009.5166230
  • Filename
    5166230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2562246