Title :
Light-induced changes of amorphous silicon solar cells by long-term light exposure
Author :
Yamagishi, H. ; Asaoka, K. ; Nevin, W.A. ; Yamaguchi, M. ; Tawada, Y.
Author_Institution :
Kaneka Corp., Kobe, Japan
Abstract :
Changes in the performance of a-Si solar cells by long-term light exposure to sunlight have been measured and compared with various results obtained using indoor acceleration tests. Using these results and a simple model, it is expected that the ultimate fill factor of the cell after long-term light exposure will not be less than a value which is 9% smaller than that after outdoor degradation for the first half year. It was also found that the electronic properties of a-Si films graded by long-term light exposure do not recover completely. These results are discussed in terms of models of the distribution of annealing activation energies
Keywords :
amorphous semiconductors; electrical conductivity of amorphous semiconductors and insulators; elemental semiconductors; life testing; semiconductor device testing; silicon; solar cells; Si; amorphous semiconductors; annealing activation energies; electronic properties; fill factor; indoor acceleration tests; long-term light exposure; model; performance; semiconductor device testing; solar cells; sunlight; Amorphous silicon; Annealing; Bonding; Impurities; Laboratories; Life estimation; Photovoltaic cells; Temperature; Testing; Thermal degradation;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169426
