Title :
Multi-functional annealing using flexibly-shaped-pulse flash lamp annealing (FSP-FLA) for high-k/metal gated CMOS devices
Author :
Aoyama, Takayuki ; Kato, Shin-ichi ; Onizawa, Takashi ; Ikeda, Kazuto ; Ohji, Yuzuru
Author_Institution :
Semicond. Leading Edge Technol., Inc. (Selete), Tsukuba, Japan
Abstract :
We have presented functional annealing data using the FSP-FLA (flexibly-shaped-pulse flash lamp annealing), together with some examples of the multi-functionality. First, we showed that the FSP-FLA can control thermal budget whilst sustaining high dopant activation, recovering crystalline defects, and controlling thermal diffusion length. Secondly, by combining impulses from conventional FLA and the trapezoidal pulse of the FSP-FLA, we can improve BTI (bias-temperature instability) lifetime and carrier mobility (mueff), without degrading Rs-Xj (sheet resistance and junction depth) characteristics. In addition, we showed the FSP-FLA pulse for preheat control. Therefore, we have a high confidence that FLA has evolved to the 2nd generation with the FSP-FLA system and it will be a main-stream annealing method for scaled high-k/metal gated devices in the near future.
Keywords :
CMOS integrated circuits; carrier mobility; high-k dielectric thin films; incoherent light annealing; semiconductor junctions; thermal diffusion; bias-temperature instability; carrier mobility; complimentary metal-oxide-semiconductor devices; flexibly-shaped-pulse flash lamp annealing; functional annealing data; high-k/metal gated CMOS devices; multifunctional annealing; ultra-shallow junction; Annealing; CMOS technology; Circuits; Electrical resistance measurement; High K dielectric materials; High-K gate dielectrics; Lamps; Pulse shaping methods; Switches; Tin;
Conference_Titel :
Junction Technology, 2009. IWJT 2009. International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-3319-3
Electronic_ISBN :
978-1-4244-3320-9
DOI :
10.1109/IWJT.2009.5166232
