Fundamental study on the impact of C co-implantation on ultra shallow B juntions

Author

Zschätzsch, G. ; Vandervorst, W. ; Hoffmann, T. ; Everaert, J.-L. ; del Agua Borniquel, J.I.

fYear

2009

fDate

11-12 June 2009

Firstpage

123

Lastpage

126

Abstract

In this work, the impact of carbon co-implantation on ultra shallow boron - plasma - doping profiles has been investigated. C is used as a co-implant due to its highly effective mechanism of transient enhanced diffusion and junction depth reduction. The phenomena that lead to changes of the carrier mobility, the activation and accordingly the sheet resistance have been studied. A strong increase of sheet resistance as a result of the increased overlap between the B and C profiles was encountered. It was shown that the increasing sheet resistance was the result of mobility degradation due to increased scattering at interstitial C.

Keywords

boron; carbon; carrier mobility; diffusion; doping profiles; elemental semiconductors; interstitials; ion implantation; plasma materials processing; semiconductor doping; silicon; Si:B,C; carbon co-implantation; carrier mobility; doping profiles; interstitial; junction depth reduction; plasma; sheet resistance; transient enhanced diffusion; ultra shallow boron juntions; Annealing; Atomic measurements; Boron; Doping profiles; Electrical resistance measurement; Implants; Plasma accelerators; Plasma materials processing; Plasma measurements; Plasma sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2009. IWJT 2009. International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4244-3319-3

Electronic_ISBN

978-1-4244-3320-9

Type

conf

DOI

10.1109/IWJT.2009.5166235

Filename

5166235