DocumentCode :
2562339
Title :
Semiconductor laser bifurcations
Author :
Erneux, T. ; Gavrielides, A. ; Kovanis, V.
Author_Institution :
Optique Nonlineaire Theorique, Univ. Libre de Bruxelles, Belgium
Volume :
2
fYear :
1996
fDate :
18-21 Nov. 1996
Firstpage :
286
Abstract :
Semiconductor lasers (SLs) have a wide range of applications but a weak optical feedback is enough to destabilize its normal output. These instabilities generate higher intensity or frequency noise which is undesirable for certain applications. By contrast to other commercial lasers (gas and solid state lasers), the dynamical mechanisms causing these instabilities are less understood. Direct experimental observation of the intensity of the laser output vs time is difficult but recent Fourier spectra measurements combined with numerical studies of rate equations have shown that these instabilities are the result of successive bifurcations. We analyze these bifurcations using modern asymptotic techniques. To this end, we take advantage of the natural parameters of the laser equations.
Keywords :
bifurcation; laser feedback; laser noise; laser stability; laser theory; semiconductor lasers; asymptotic techniques; dynamical mechanisms; frequency noise; instabilities; intensity noise; laser equations; natural parameters; semiconductor laser bifurcations; successive bifurcations; weak optical feedback; Bifurcation; Equations; Gas lasers; Laser feedback; Laser modes; Laser noise; Laser sintering; Optical feedback; Semiconductor lasers; Solid lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
Type :
conf
DOI :
10.1109/LEOS.1996.571681
Filename :
571681
Link To Document :
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