Simplified simulation of a-Si:H based solar cells

Author

Yeung, P. ; Shapiro, F.R. ; Rothwarf, A.

Author_Institution

Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1369

Abstract

A simplified model has been developed to simulate the current-voltage characteristic of a-Si:H pin solar cells using a personal computer. The calculated total current includes two components: dark diode current and light generated current. The electric field is modeled as voltage dependent, with two high field regions near the p-i and n-i interfaces, and a low field region for the middle of the i-layer. Input parameters include the incident spectrum, the absorption coefficients, the widths of the various field regions, the diffusion length, and the interface recombination velocities. The parameters can easily be changed for various alloy compositions. The results indicate that the voltage variation of the light-generated current dominates the current-voltage relation

Keywords

amorphous semiconductors; digital simulation; electric fields; electronic engineering computing; elemental semiconductors; hydrogen; microcomputer applications; semiconductor device models; silicon; solar cells; Si:H; absorption coefficients; amorphous; current-voltage characteristic; dark diode current; diffusion length; digital simulation; electric field; incident spectrum; interface recombination velocities; interfaces; light generated current; personal computer; semiconductor device models; solar cells; Computational modeling; Computer simulation; Current-voltage characteristics; Microcomputers; Photovoltaic cells; Poisson equations; Radiative recombination; Solar power generation; Space charge; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169431

Filename

169431