DocumentCode :
2562389
Title :
Wideband characterization of aluminum nitride (AlN) substrates and high frequency application on these substrates
Author :
Farzanehfard, H. ; Elshabini-Riad, A.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear :
1990
fDate :
11-14 June 1990
Firstpage :
218
Lastpage :
219
Abstract :
The authors present a method to measure effectively and accurately the dielectric constant of AlN and other ceramic substrates (beryllia and alumina) over a wideband range of frequencies. Measurement results demonstrate the superior performance of AlN substrate material as compared to alumina. It is shown that AlN possesses a dielectric constant on the order of 7.7 in the frequency range DC to a few GHz. A picosecond pulse generator has been built on AlN to demonstrate its performance for a high-frequency application. AlN exhibits good performance at high frequencies and its high thermal conductivity makes it an excellent choice for high-power applications.<>
Keywords :
aluminium compounds; permittivity measurement; substrates; AlN substrate; ceramic substrates; dielectric constant; high-frequency application; high-power applications; picosecond pulse generator; thermal conductivity; Aluminum nitride; Ceramics; Dielectric constant; Dielectric materials; Dielectric measurements; Dielectric substrates; Frequency measurement; Pulse generation; Thermal conductivity; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location :
Ottawa, Ontario, Canada
Type :
conf
DOI :
10.1109/CPEM.1990.109996
Filename :
109996
Link To Document :
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