• DocumentCode
    2562400
  • Title

    ZnO films deposited by APCVD

  • Author

    Adachi, K. ; Sato, K. ; Gotoh, Y. ; Nishimura, H.

  • Author_Institution
    Asahi Glass Co. Ltd., Yokohama, Japan
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1385
  • Abstract
    The deposition kinetics and impurity doping on ZnO films are studied. The film was prepared by atmospheric pressure CVD using zinc acetylacetonate. The rate determining reaction for film growing seems to be the reaction between the raw material and oxygen. Aluminum doping decreased the resistivity to 3.5×10-2 Ω-cm. Fluorine doping is found to be more effective. A resistivity of 2.0×10-3 Ω-cm was obtained
  • Keywords
    II-VI semiconductors; chemical vapour deposition; electronic conduction in crystalline semiconductor thin films; semiconductor doping; semiconductor growth; semiconductor thin films; zinc compounds; ZnO:Al; atmospheric pressure CVD; deposition kinetics; doping; impurity; resistivity; semiconductor growth; semiconductor thin films; Aluminum; Conductivity; Doping; Glass; Photovoltaic cells; Plasma temperature; Raw materials; Substrates; Temperature dependence; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169434
  • Filename
    169434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2562400