Title :
ZnO films deposited by APCVD
Author :
Adachi, K. ; Sato, K. ; Gotoh, Y. ; Nishimura, H.
Author_Institution :
Asahi Glass Co. Ltd., Yokohama, Japan
Abstract :
The deposition kinetics and impurity doping on ZnO films are studied. The film was prepared by atmospheric pressure CVD using zinc acetylacetonate. The rate determining reaction for film growing seems to be the reaction between the raw material and oxygen. Aluminum doping decreased the resistivity to 3.5×10-2 Ω-cm. Fluorine doping is found to be more effective. A resistivity of 2.0×10-3 Ω-cm was obtained
Keywords :
II-VI semiconductors; chemical vapour deposition; electronic conduction in crystalline semiconductor thin films; semiconductor doping; semiconductor growth; semiconductor thin films; zinc compounds; ZnO:Al; atmospheric pressure CVD; deposition kinetics; doping; impurity; resistivity; semiconductor growth; semiconductor thin films; Aluminum; Conductivity; Doping; Glass; Photovoltaic cells; Plasma temperature; Raw materials; Substrates; Temperature dependence; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169434
