Title :
FEM analysis of GaN based surface acoustic wave resonators
Author :
Stefanescu, A. ; Muller, A. ; Dinescu, A. ; Konstantinidis, G. ; Cismaru, A. ; Stavrinidis, A. ; Neculoiu, D.
Author_Institution :
IMT Bucharest, Bucharest, Romania
Abstract :
For the integration of surface acoustic wave (SAW) devices with nanostructures, numerical simulations must be employed. This paper describes finite element (FEM) models for a basic periodic cell of two types of SAW devices on GaN/Si devoted for GHz applications. E-beam lithographical techniques have been used for IDT fingers of 200nm wide. On wafer measurements of S parameters have shown a good agreement with the simulation results regarding the operation frequency.
Keywords :
electron beam lithography; finite element analysis; gallium compounds; surface acoustic wave resonators; FEM analysis; GHz application; GaN based surface acoustic wave resonators; S parameters; basic periodic cell; e-beam lithographical technique; finite element models; nanostructures; numerical simulation; surface acoustic wave devices; Electrodes; Finite element methods; Gallium nitride; Resonant frequency; Silicon; Surface acoustic wave devices; Surface acoustic waves; E-beam nanolithography; FEM simulation; surface acoustic waves (SAW);
Conference_Titel :
Semiconductor Conference (CAS), 2011 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-61284-173-1
DOI :
10.1109/SMICND.2011.6095751
