12 dB current modulation by 1.55 /spl mu/m light irradiation in integrated optically controlled HEMT

Author

Shimomura, K. ; Sakai, T. ; Nitta, Y.

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan

fYear

1998

fDate

12-14 Oct. 1998

Firstpage

189

Lastpage

192

Abstract

We demonstrated an integrated optically controlled HEMT. By comparing the optically controlled FET using bulk GaAs channel, the optical response characteristics was highly improved in the optically controlled HEMT because of the increase of transconductance of FET´s channel. We obtained maximum on/off ratio of 12dB and maximum responsivity of 305 A/W. It was confirmed that the application of HEMT structure to the integrated optically controlled FET was effective for the improvement of device characteristics.

Keywords

high electron mobility transistors; integrated optics; microwave photonics; optical receivers; p-i-n photodiodes; 1.55 /spl mu/m light irradiation; 1.55 mum; FET channel; GaAs; HEMT structure; bulk GaAs channel; current modulation; device characteristics; integrated optically controlled FET; integrated optically controlled HEMT; maximum on/off ratio; maximum responsivity; optical response characteristics; optically controlled FET; optically controlled HEMT; transconductance; Absorption; FETs; Gallium arsenide; HEMTs; High speed optical techniques; Integrated optics; Lighting control; Optical control; Optical devices; Optical modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1998. MWP '98. International Topical Meeting on

Conference_Location

Princeton, NJ, USA

Print_ISBN

0-7803-4936-9

Type

conf

DOI

10.1109/MWP.1998.745660

Filename

745660