Title :
Bandwidth characteristics of InP/InGaAs uni-traveling-carrier photodiodes
Author :
Shimizu, N. ; Watanabe, N. ; Furuta, T. ; Ishibashi, T.
Author_Institution :
NTT Opt. Network Syst. Labs., Yokosuka, Japan
Abstract :
We report on the photoresponse of InP-InGaAs uni-traveling-carrier photodiodes (UTC-PDs) for different absorption layer thicknesses. The result indicates that the bandwidth is described by a constant diffusion coefficient, which is as high as that for majority electrons. This is contrary to the theoretical analysis, which predicts a 50% reduction in electron mobility due to coupled polar-phonon plasmon scattering in the 10/sup 18/ cm/sup 3/ doping range.
Keywords :
III-V semiconductors; electron mobility; gallium arsenide; indium compounds; phonon-plasmon interactions; photodetectors; photodiodes; semiconductor doping; InP-InGaAs; InP-InGaAs uni-traveling-carrier photodiodes; absorption layer thicknesses; bandwidth characteristics; constant diffusion coefficient; coupled polar-phonon plasmon scattering; doping range; electron mobility; majority electron; photoresponse; theoretical analysis; Absorption; Bandwidth; Doping; Electron mobility; Indium gallium arsenide; Indium phosphide; Laboratories; Lasers and electrooptics; Photodiodes; Pulse measurements;
Conference_Titel :
Microwave Photonics, 1998. MWP '98. International Topical Meeting on
Conference_Location :
Princeton, NJ, USA
Print_ISBN :
0-7803-4936-9
DOI :
10.1109/MWP.1998.745661
