Tunable long wavelength LED using wafer bonding and micromachining technologies

Author

Christenson, G.L. ; Tran, A.T.T.D. ; Zhu, Z.H. ; Lo, Y.H. ; Hong, M. ; Mannaerts, J.P. ; Bhat, R.

Author_Institution

Cornell Univ., Ithaca, NY, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

294

Abstract

We have combined the technologies of wafer bonding and micromachining to produce a tunable LED at 1.51 /spl mu/m. The bonding technique allows us to combine an InP-based multiple quantum well structure with a GaAs-based Bragg mirror for higher reflectivity than traditional InP-based mirrors. Micromachining techniques then allow us to suspend a mirror above the surface of the substrate to provide a tuning method for the LED.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; micromachining; mirrors; semiconductor quantum wells; tuning; wafer bonding; 1.51 mum; GaAs; GaAs-based Bragg mirror; InP; InP-based multiple quantum well structure; higher reflectivity; micromachining technologies; tunable long wavelength LED; tuning method; wafer bonding; Biomembranes; Distributed Bragg reflectors; Indium phosphide; Light emitting diodes; Micromachining; Mirrors; Polyimides; Reflectivity; Voltage; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571688

Filename

571688