Production and qualification status of GaAs/Ge top/bottom contact solar cells

Author

Gillanders, M.S. ; Krut, D.D. ; Vijayakumar, P.S. ; Mason, A.V. ; Glenn, G.S. ; Lillington, D.R. ; Cavicchi, B.T. ; Yang, H.T. ; Rolph, R.K.

Author_Institution

Spectrolab Inc., Sylmar, CA, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1469

Abstract

The status of top/bottom contact GaAs/Ge solar cell production is described. Over 3000 equivalent 2 cm×4 cm cells have been processed on the manufacturing line. The majority have been 2 cm×4 cm at 7.5 mils thick, but 4 cm×4 cm and 6 cm×6 cm cells have also been produced in thicknesses down to 3.5 mils. Flight program results are presented for UoSAT-F, and the current status of cells and panels built for the SAMPEX and PASP Plus programs is discussed

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor device manufacture; solar cell arrays; solar cells; space vehicle power plants; 2 cm; 3.5 mm; 4 cm; 6 cm; 7.5 nm; GaAs-Ge; UoSAT-F; manufacturing line; production; semiconductor device manufacture; solar cell arrays; space power; top/bottom contact solar cells; Aircraft; Assembly; Gallium arsenide; Inductors; Manufacturing processes; Photovoltaic cells; Production; Qualifications; Substrates; Welding;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169448

Filename

169448