45 GHz wide bandwidth InGaAs/InP photoreceiver

Author

Joshi, A. ; Xinde Wang ; Mohr, D. ; Paollela, A. ; Stacey, W.

Author_Institution

Duxevery Semicond. Inc., Cranbury, NJ, USA

fYear

1998

fDate

12-14 Oct. 1998

Firstpage

241

Lastpage

247

Abstract

Discovery Semiconductors has developed a 45 GHz "dual-depletion InGaAs-InP photodetector". The PIN operates at -3 V reverse bias and has minimum responsivity of 0.5 A/W at 1.3 and 1.55 /spl mu/m wavelength. The ripple factor is less than /spl plusmn/1 dB for a wide band of frequencies, DC to 45 GHz. The salient feature of the PIN is an on-chip co-planar waveguide output for proper impedance matching. The combination of optical, microwave, and digital functions on the same chip is a technology that has significant potential for commercial applications such as ethernet fiber local area networks and optical communications systems.

Keywords

III-V semiconductors; MMIC; gallium arsenide; indium compounds; infrared detectors; microwave photonics; optical receivers; photodetectors; submillimetre wave detectors; 1.3 mum; 1.55 mum; 3 V; Discovery Semiconductors; GHz dual-depletion InGaAs-InP photodetector; InGaAs-InP; MMICs; commercial applications; ethernet fiber local area networks; impedance matching; microwave photonics; minimum responsivity; optical communications systems; ripple factor; wide bandwidth InGaAs/InP photoreceiver; Bandwidth; Frequency; Impedance matching; Indium gallium arsenide; Indium phosphide; Optical fiber LAN; Optical fiber communication; Optical fiber networks; Optical waveguides; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1998. MWP '98. International Topical Meeting on

Conference_Location

Princeton, NJ, USA

Print_ISBN

0-7803-4936-9

Type

conf

DOI

10.1109/MWP.1998.745674

Filename

745674