DocumentCode :
2562691
Title :
Direct cover glass bonding to GaAs and GaAs/Ge solar cells
Author :
Nowlan, M.J. ; Tobin, S.P. ; Darkazalli, G.
Author_Institution :
Spire Corp., Bedford, MA, USA
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
1480
Abstract :
Electrostatic bonding is being developed as a technique for attaching cover glasses directly to GaAs and GaAs/Ge solar cells. This process eliminates the elastometric adhesive used in conventional cell assemblies, thereby increasing the thermal stability and radiation tolerance of the assemblies. Cover glasses have been electrostatically bonded to GaAs solar cells with minimal (2%) degradation in conversion efficiency. Bonded cells have survived thermal cycling between -180°C and +150°C without degradation. Glass has also been bonded to AR-coated GaAs/Ge wafers. The wafers were then selectively etched to remove the Ge substrate, leaving only the epitaxial GaAs film attached to the glass. This approach may lead to very lightweight high-efficiency thin-film solar cells
Keywords :
III-V semiconductors; electrostatics; elemental semiconductors; gallium arsenide; germanium; joining processes; solar cells; GaAs solar cells; GaAs-Ge solar cells; antireflection coated GaAs/Ge wafers; cover glass bonding; electrostatic bonding; radiation tolerance; thermal stability; Assembly; Electrostatics; Etching; Gallium arsenide; Glass; Joining processes; Photovoltaic cells; Thermal degradation; Thermal stability; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169450
Filename :
169450
Link To Document :
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