Title :
Status of a silicon lattice measurement and dissemination exercise
Author :
Deslattes, R.D. ; Kessler, E.G., Jr.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Summary form only given. Work on lattice period measurement in monocrystalline silicon is described. An upgraded X-ray/optical interferometer and a recently developed lattice comparator are being used in the investigation. Each instrument is seen as having a potential accuracy approaching or exceeding 0.01 ppm, yet this accuracy has not been realized. The reasons for this are discussed.<>
Keywords :
X-ray apparatus; elemental semiconductors; lattice constants; light interferometers; silicon; spatial variables measurement; Avogadro constant; X-ray/optical interferometer; lattice comparator; lattice period measurement; monocrystalline Si; Crystallization; Goniometers; Optical interferometry; Shape measurement; Size measurement; Wavelength measurement;
Conference_Titel :
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location :
Ottawa, Ontario, Canada
DOI :
10.1109/CPEM.1990.110013
