Title :
Recent technology advances in large area, lightweight GaAs/Ge solar cells
Author :
Chu, C. ; Iles, P. ; Yoo, H. ; Reed, B. ; Krogen, J.
Author_Institution :
Applied Solar Energy Corp., City of Industry, CA, USA
Abstract :
Advances in the technology for producing large-area, thin gallium arsenide solar cells on germanium substrates are described. Most of the discussion is of cells around 90 μm thick with areas 16 to 36 cm2. Processing aspects are discussed. The best cells made are described, showing the possibility of further improved performance in production. These cells have been successfully incorporated into lightweight panels, and both cells and panels have passed space qualification tests
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor thin films; solar cells; 90 micron; GaAs-Ge solar cells; Ge; lightweight solar cells; thin films; Biomembranes; Contacts; Dry etching; Gallium arsenide; MOCVD; Photovoltaic cells; Protection; Solar power generation; Surface finishing; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169456
