Copper thick-film multilayer technology as a high frequency digital interconnection

Author

Beyne, E. ; Roggen, J. ; Mertens, R.

Author_Institution

Interuniv. Micro-Electron. Centre, Leuven, Belgium

fYear

1988

fDate

9-11 May 1988

Firstpage

641

Lastpage

647

Abstract

A test circuit with six conductor layers was realized using copper thick-film 50-ohm lines having a high bandwidth. This technology can be used for high-frequency digital applications with bit rates up to 600 Mb/s. The design of the transmission lines is based on a quasi-static analysis. The limitations of this technology are the minimal linewidth (100 mu m), the thickness of the dielectric layers (20 to 25 mu m/layer), the via resolution (300*300 mu m), and the large number of firing steps needed to build a multilayer circuit.<>

Keywords

copper; high-frequency transmission lines; integrated circuit technology; thick film circuits; 600 Mbit/s; Cu thick film multilayer technology; dielectric layer thickness; firing steps; high frequency digital interconnection; integrated circuits; minimal linewidth; quasi-static analysis; transmission lines; Copper; Distortion; Distributed parameter circuits; Frequency; Integrated circuit interconnections; Integrated circuit technology; Nonhomogeneous media; Propagation delay; Reflection; Software tools;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Components Conference, 1988., Proceedings of the 38th

Conference_Location

Los Angeles, CA, USA

Type

conf

DOI

10.1109/ECC.1988.12661

Filename

12661