Title :
Grain growth and characteristics of chlorine doped thick polycrystalline CdZnTe films
Author :
Yoshimatsu, Akina ; Yoshimuta, Toshinori ; Tokuda, Satoshi ; Kishihara, Hiroyuki ; Kaino, Masatomo ; Doki, Takahiro ; Sato, Takao ; Okamoto, Tatsuaki
Author_Institution :
Technol. Res. Lab., Shimadzu Corp., Kyoto, Japan
fDate :
Oct. 27 2012-Nov. 3 2012
Abstract :
Chlorine (CI)-doped polycrystalline CdZnTe is expected to be used as photoconductor material for Flat Panel Xray detectors (FPDs) due to its high detection efficiency and environmental resistance. However, polycrystalline film causes great variability among pixels in the X-ray image of FPDs. To reduce the variability among pixels, chlorine doping methods and their effects were investigated. By combining the two methods, the addition of CdCl2 to the source and the introduction of vapor chloroform during deposition, we were able to reduce the variability among pixels.
Keywords :
II-VI semiconductors; X-ray detection; chlorine; grain growth; photoconducting materials; semiconductor counters; semiconductor doping; semiconductor growth; semiconductor thin films; CdZnTe:Cl; X-ray image; chlorine doped thick polycrystalline CdZnTe films; chlorine doping methods; environmental resistance; flat panel X-ray detectors; grain growth; high-detection efficiency; photoconductor material; vapor chloroform;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4673-2028-3
DOI :
10.1109/NSSMIC.2012.6551945
