Charge multiplication in CdZnTe Schottky barrier diode detectors at alpha-particles registration

Author

Ivanov, V. ; Loutchanski, A. ; Dorogov, P. ; Shorohov, M.

Author_Institution

ZRF RlTEC SIA, Riga, Latvia

fYear

2012

fDate

Oct. 27 2012-Nov. 3 2012

Firstpage

4138

Lastpage

4141

Abstract

The planar detectors with Schottky barrier diode structure (Au/CdZnTe/In) were investigated using alpha-particle response characterisation. At irradiation of a negative In contact by alpha-particles of 5.5 MeV slow pulses with extremely large amplitude, exceeding in tens times the amplitude of the pulses when operating at the reverse bias have been found. To study this phenomenon a special charge-sensitive preamplifier with low charge sensitivity and a large decay time constant has been used. Was found that the amplitude of the output pulses obtained with detectors having Schottky barrier diode structure at the forward biases exceed in many times the amplitude of output pulses obtained with planar conductive detector (Au/CdZnTe/Au) fabricated of the same crystal. Irradiation of a negative contact of the conductive detector with a laser visible light (635 nm) leads to the similar effect.

Keywords

II-VI semiconductors; Schottky barriers; Schottky diodes; alpha-particles; cadmium compounds; electrical contacts; gold; indium; laser beam effects; metal-semiconductor-metal structures; semiconductor counters; wide band gap semiconductors; zinc compounds; Au-CdZnTe-In; Schottky barrier diode detectors; Schottky barrier diode structure; alpha-particle response characterisation; charge multiplication; charge sensitivity; charge-sensitive preamplifier; conductive detector; electron volt energy 5.5 MeV; forward biases; large decay time constant; laser visible light; negative contact irradiation effect; output pulses; planar conductive detector; planar detectors; reverse bias effect; wavelength 635 nm;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE

Conference_Location

Anaheim, CA

ISSN

1082-3654

Print_ISBN

978-1-4673-2028-3

Type

conf

DOI

10.1109/NSSMIC.2012.6551946

Filename

6551946