Title :
Electron irradiation effects in epitaxial InP solar cells
Author :
Pearsall, N.M. ; Robson, N. ; Sambell, A.J. ; Anspaugh, B. ; Cross, T.A.
Author_Institution :
Newcastle Polytech., UK
Abstract :
Performance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1×1016 e/cm 2 are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90°C is reported
Keywords :
III-V semiconductors; annealing; capacitance; electron beam effects; indium compounds; p-n homojunctions; semiconductor epitaxial layers; semiconductor materials; solar cells; tin compounds; 90 degC; ITO-InP; InSnO-InP; capacitance measurements; electron irradiation effects; epitaxial InP solar cells; epitaxially grown active regions; homojunction design; illumination; performance recovery; spectral response; thermal annealing; Annealing; Electrons; Epitaxial growth; Epitaxial layers; Fabrication; Indium phosphide; Photovoltaic cells; Process design; Sputtering; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169465
