Analysis of space flight data of InP solar cells in EXOS-D orbit

Author

Yamaguchi, M. ; Hayashi, T. ; Ushirokawa, A. ; Takahashi, K. ; Takamoto, T. ; Okazaki, H. ; Ohmori, M. ; Ikegami, S. ; Arai, H.

Author_Institution

NTT Opto-electron. Lab., Ibaraki, Japan

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1576

Abstract

Flight data of InP solar cells in the EXOS-D orbit (in a high-altitude polar orbit) have been analyzed based on the effects of proton and electron irradiation on them. Good agreement between analytical results and flight data for InP solar cell properties in the EXOS-D orbit shows the validity of the analytical model and that this analytical model is useful for designing space power systems using InP cells in other orbits with known radiation environments. The InP solar cells are concluded to be applicable to space cells, especially in severe radiation environments

Keywords

III-V semiconductors; electron beam effects; indium compounds; proton effects; solar cells; space vehicle power plants; EXOS-D orbit; InP solar cells; electron irradiation; high-altitude polar orbit; proton irradiation; space flight data; space power systems; Coatings; Current density; Degradation; Electrons; Gallium arsenide; Indium phosphide; Lighting; Photovoltaic cells; Protons; Satellites;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169469

Filename

169469