Rapid photothermal processing for functionalization of nanostructured thin films

Author

Shishiyanu, S. ; Ursaki, V.V. ; Ghimpu, L. ; Lupan, O. ; Tiginyanu, I. ; Shishiyanu, T.

Author_Institution

Dept. of Microelectron. & Semicond. Devices, Tech. Univ. of Moldova, Chisinau, Moldova

Volume

2

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

245

Lastpage

248

Abstract

A rapid photothermal processing (RPP) technique has been developed to functionalize a new generation of nanostructured zinc oxide film materials. An environment-friendly chemical process was used to obtain nanostructures. The post-growth RPP at 650°C in N₂ atmosphere of the nanostructured zinc oxide films leads to the suppression of deep-defect-level emission, improvement of near-band edge emission and was ascribed to the decrease of the structure defects compared to the initial nanostructures. The sensitivity of the nanostructured zinc oxide films to 100 ppm ammonia for the operation temperatures between 20°C and 300°C was essentially improved by RPP.

Keywords

II-VI semiconductors; Raman spectra; crystal defects; deep levels; defect states; liquid phase deposition; nanofabrication; nanostructured materials; photoluminescence; photothermal effects; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; ammonia; deep-defect-level emission; nanostructured thin films; near-band edge emission; rapid photothermal processing; structure defects; temperature 20 degC to 300 degC; temperature 650 degC; Annealing; Films; Nanostructures; Temperature sensors; Zinc oxide; chemical growth; nanostructures; rapid photothermal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2011 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-61284-173-1

Type

conf

DOI

10.1109/SMICND.2011.6095782

Filename

6095782