Anisotropic etching properties of silicon in KOH and TMAH solutions

Author

Tokoro, Kenji ; Uchikawa, Daisuke ; Shikida, Mitsuhiro ; Sato, Kazuo

Author_Institution

Dept. of Micro Syst. Eng., Nagoya Univ., Japan

fYear

1998

fDate

25-28 Nov 1998

Firstpage

65

Lastpage

70

Abstract

We investigated anisotropic etching properties of single-crystal silicon as a function of crystallographic orientations in order to fabricate a variety of 3D microstructures on silicon substrates. We measured etching rates for a number of crystallographic orientations using hemispherical specimens. From the dimensional change of the specimen surface, we evaluated the etching rates for a number of crystallographic orientations. We carried out a series of experiments in KOH and TMAH solutions changing their concentration and temperature and compared anisotropic etching properties between KOH and TMAH solutions. The orientation dependencies of their etching rates differed, especially for near (111) orientations. This means that these two etchants have different etching mechanisms. Effects of etchant circulation on the etching rates were not negligible in TMAH in contrast to KOH

Keywords

crystal orientation; elemental semiconductors; etching; micromechanical devices; silicon; 3D microstructures; KOH solutions; Si; TMAH solutions; anisotropic etching properties; crystallographic orientations; etchant circulation; etching mechanisms; etching rates; hemispherical specimens; near (111) orientations; Anisotropic magnetoresistance; Chemicals; Crystallography; Etching; Iron; Microstructure; Rough surfaces; Silicon; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Micromechatronics and Human Science, 1998. MHS '98. Proceedings of the 1998 International Symposium on

Conference_Location

Nagoya

Print_ISBN

0-7803-5130-4

Type

conf

DOI

10.1109/MHS.1998.745752

Filename

745752