DocumentCode :
2563155
Title :
Studies of long time and transient effects induced by radiation in crystalline materials
Author :
Lazanu, S. ; Lazanu, I. ; Iordache, G. ; Stavarache, I. ; Lepadatu, A. ; Slav, A.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania
Volume :
2
fYear :
2011
fDate :
17-19 Oct. 2011
Firstpage :
261
Lastpage :
264
Abstract :
The long time degradation produced by particles and ions in crystalline materials used for devices to work in space, or for detectors in HEP and astroparticles, is characterised by the non-ionising energy loss, which is calculated in the frame of an analytical model. The transient phenomena as short time degradation are characterised by the time and space dependencies of the lattice and electron temperatures near the projectile trajectory. These processes are considered in the frame of a thermal spike model, which takes into account both ionization and nuclear energy loss processes.
Keywords :
III-V semiconductors; elemental semiconductors; energy loss of particles; gallium arsenide; gallium compounds; germanium; indium compounds; ion beam effects; silicon; silicon compounds; GaAs; GaSb; Ge; InP; InSb; Si; SiC; astroparticles; crystalline materials; degradation; detectors; ions; nonionising energy loss; nuclear energy loss processes; particles; radiation field; thermal spike model; transient phenomena; Gold; Ions; Mesons; Protons; Transient analysis; Xenon; effects of irradiation; radiation field; semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2011 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-61284-173-1
Type :
conf
DOI :
10.1109/SMICND.2011.6095786
Filename :
6095786
Link To Document :
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