• DocumentCode
    2563155
  • Title

    Studies of long time and transient effects induced by radiation in crystalline materials

  • Author

    Lazanu, S. ; Lazanu, I. ; Iordache, G. ; Stavarache, I. ; Lepadatu, A. ; Slav, A.

  • Author_Institution
    Nat. Inst. of Mater. Phys., Bucharest-Magurele, Romania
  • Volume
    2
  • fYear
    2011
  • fDate
    17-19 Oct. 2011
  • Firstpage
    261
  • Lastpage
    264
  • Abstract
    The long time degradation produced by particles and ions in crystalline materials used for devices to work in space, or for detectors in HEP and astroparticles, is characterised by the non-ionising energy loss, which is calculated in the frame of an analytical model. The transient phenomena as short time degradation are characterised by the time and space dependencies of the lattice and electron temperatures near the projectile trajectory. These processes are considered in the frame of a thermal spike model, which takes into account both ionization and nuclear energy loss processes.
  • Keywords
    III-V semiconductors; elemental semiconductors; energy loss of particles; gallium arsenide; gallium compounds; germanium; indium compounds; ion beam effects; silicon; silicon compounds; GaAs; GaSb; Ge; InP; InSb; Si; SiC; astroparticles; crystalline materials; degradation; detectors; ions; nonionising energy loss; nuclear energy loss processes; particles; radiation field; thermal spike model; transient phenomena; Gold; Ions; Mesons; Protons; Transient analysis; Xenon; effects of irradiation; radiation field; semiconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2011 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-61284-173-1
  • Type

    conf

  • DOI
    10.1109/SMICND.2011.6095786
  • Filename
    6095786