Title :
Simulation and experimental study on the characteristics of plasma-induced damage and methodology for accurate damage analysis
Author :
Matsuda, Asahiko ; Nakakubo, Yoshinori ; Ogino, Riki ; Ohta, Hiroaki ; Eriguchi, Koji ; Ono, Kouichi
Author_Institution :
Grad. Sch. of Eng., Kyoto Univ., Kyoto, Japan
Abstract :
Physical damages to Si substrate induced by energetic ions from plasma, associated with Si recess, is studied. By using molecular dynamics (MD) simulation, we clarified the structural picture of the damage. By spectroscopic ellipsometry (SE) measurements, we experimentally analyzed damaged layer thickness and energy band structure. Comprehensive analysis of the damage suggests device performance degradation related to basic plasma parameters. The methodology described in this work is necessary in accurate understanding and prediction of plasma-induced damage, e.g., Si recess.
Keywords :
band structure; ellipsometry; molecular dynamics method; spectroscopy; sputter etching; substrates; Si; accurate damage analysis; comprehensive damage analysis; device performance degradation; energetic ions; energy band structure; molecular dynamics simulation; plasma parameter; plasma-induced damage; silicon substrate; spectroscopic ellipsometry measurement; Analytical models; Ellipsometry; Energy measurement; Performance analysis; Plasma devices; Plasma measurements; Plasma properties; Plasma simulation; Spectroscopy; Thickness measurement; ellipsometry; molecular dynamics simulation; plasma etching; plasma-induced damage; recess structure; silicon;
Conference_Titel :
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-2933-2
Electronic_ISBN :
978-1-4244-2934-9
DOI :
10.1109/ICICDT.2009.5166274
