Simulation and experimental study on the characteristics of plasma-induced damage and methodology for accurate damage analysis

Physical damages to Si substrate induced by energetic ions from plasma, associated with Si recess, is studied. By using molecular dynamics (MD) simulation, we clarified the structural picture of the damage. By spectroscopic ellipsometry (SE) measurements, we experimentally analyzed damaged layer thickness and energy band structure. Comprehensive analysis of the damage suggests device performance degradation related to basic plasma parameters. The methodology described in this work is necessary in accurate understanding and prediction of plasma-induced damage, e.g., Si recess.