A study of diffusion in layered thin film [MEMS]

Author

Yamamoto, Toshihiro ; Kotera, Hidetoshi ; Hirasam, T. ; Sakamoto, Yuki ; Shima, Susumu

Author_Institution

Dept. of Mech. Eng., Kyoto Univ., Japan

fYear

1998

fDate

25-28 Nov 1998

Firstpage

71

Lastpage

76

Abstract

A diffusion layer, that is likely to be formed at the interface of the multilayered thin film, would affect its mechanical properties. The thinner the thin film, the more significant would be the effect. We measure the thickness of the diffusion layer at the vicinity of Al/SiO ₂ and Al/Si wafer interfaces with the aid of Auger electron spectroscopy (AES). In this paper, we investigate the effect of heat treatment after fabrication of the thin films on the diffusion at these interfaces. We thereby estimate the thickness of the diffusion layer and discuss the effect of temperature on its thickness

Keywords

Auger electron spectroscopy; aluminium; elemental semiconductors; heat treatment; insulating thin films; micromechanical devices; silicon; silicon compounds; Al-Si; Al-SiO₂; Auger electron spectroscopy; MEMS; diffusion layer; heat treatment; mechanical properties; multilayered thin film; Artificial intelligence; Atomic measurements; Fabrication; Heat treatment; Mechanical factors; Micromechanical devices; Semiconductor thin films; Silicon; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micromechatronics and Human Science, 1998. MHS '98. Proceedings of the 1998 International Symposium on

Conference_Location

Nagoya

Print_ISBN

0-7803-5130-4

Type

conf

DOI

10.1109/MHS.1998.745753

Filename

745753