Title :
Direct comparisons of quantized Hall resistances
Author :
Piquemal, F. ; Etienne, B. ; Andre, J.P.
Author_Institution :
LCIE, Fontenay-aux-Roses, France
Abstract :
The quantized Hall resistances (QHRs) of three GaAs/Al/sub x/Ga/sub 1-x/As heterostructures were directly compared. Two of the three samples were grown by metalorganic chemical vapor deposition. and the third was produced by molecular beam epitaxy. A cryogenic current comparator bridge was used for the measurements. The provisional results show a residual difference lower than a few parts in 10/sup 9/ with an uncertainty of the same order.<>
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; bridge instruments; electric resistance measurement; gallium arsenide; low-temperature techniques; measurement standards; molecular beam epitaxial growth; p-n heterojunctions; quantum Hall effect; GaAs-Al/sub x/Ga/sub 1-x/As; cryogenic current comparator bridge; metalorganic chemical vapor deposition; molecular beam epitaxy; quantized Hall resistances; residual difference; Bridge circuits; Cryogenics; Detectors; Electrical resistance measurement; Gallium arsenide; Leakage current; MOCVD; Molecular beam epitaxial growth; Testing; Uncertainty;
Conference_Titel :
Precision Electromagnetic Measurements, 1990. CPEM '90 Digest., Conference on
Conference_Location :
Ottawa, Ontario, Canada
DOI :
10.1109/CPEM.1990.110034
